Title of article
Low-temperature Gru¨ neisen gamma of II–VI semicoductor ZnS
Author/Authors
T. V. Anil، نويسنده , , C. S. MENON، نويسنده , , K. P. Jayachandran، نويسنده , , K. Shree Krishna Kumar، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2006
Pages
4
From page
8013
To page
8016
Abstract
The theoretical study of low-temperature
lattice thermal expansion of the II–VI semiconductor
ZnS is attempted. The generalized Gru¨ neisen gammas
of the elastic waves propagating in different directions
with respect to the [001] crystallographic axis of ZnS
are calculated using the second- and third-order elastic
constants. The values of mode Gru¨ neisen gammas cj
are determined and found generally positive except
from c2 at h = 25 to h = 65 . The low-temperature
limit of the Gru¨ neisen gamma c is determined and
compared with experimental values. Using this c; we
calculated the Brugger gamma cBr and hence the lowtemperature
volume lattice thermal expansion cL. It is
expected that the volume expansion is positive down to
absolute zero for ZnS.
Journal title
Journal of Materials Science
Serial Year
2006
Journal title
Journal of Materials Science
Record number
832299
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