Title of article
The electronic band structure of InN, InAs and InSb compounds
Author/Authors
Rezek Mohammad، نويسنده , , S، نويسنده , , enay Kat?rc?og?lu، نويسنده , , Musa El-Hasan، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2008
Pages
12
From page
2935
To page
2946
Abstract
The electronic band structure of InN, InAs and
InSb has been investigated by ETB. The ETB method has
been formulated for sp3d2 basis and nearest neighbor
interactions of the compounds and its energy parameters
have been derived from the results of the present first
principles calculations carried on InN, InAs and InSb. It
has been found that the present ETB parameters can
produce the band structure of the compounds successfully
Journal title
Journal of Materials Science
Serial Year
2008
Journal title
Journal of Materials Science
Record number
834225
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