Title of article
Comprehensive heat exchange model for a semiconductor laser diode
Author/Authors
K.P.، Pipe, نويسنده , , R.J.، Ram, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-503
From page
504
To page
0
Abstract
By measuring the total energy flow from an optical device, we can develop new design strategies for thermal stabilization. Here we present a comprehensive model for heat exchange between a semiconductor laser diode and its environment that includes the mechanisms of conduction, convection, and radiation. We perform quantitative measurements of these processes for several devices, deriving parameters such as a laserʹs heat transfer coefficient, and then demonstrate the feasibility of thermal probing for the nondestructive wafer-scale characterization of optical devices.
Keywords
genetic background , glycoalkaloids , CAPS , ISSR , polyploidy , Secondary metabolites , gene interaction
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
Serial Year
2003
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
Record number
85350
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