Title of article
Comparison of NMOS and PMOS transistor sensitivity to SEU in SRAMs by device simulation
Author/Authors
P.E.، Dodd, نويسنده , , F.W.، Sexton, نويسنده , , K.، Castellani-Coulie, نويسنده , , B.، Sagnes, نويسنده , , F.، Saigne, نويسنده , , J.-M.، Palau, نويسنده , , M.-C.، Calvet, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-2238
From page
2239
To page
0
Abstract
The off-NMOS and off-PMOS transistor single-event upset (SEU) sensitivities are studied in a 0.6-(mu)m SRAM. In some cases, the off-PMOS sensitivity is shown to be similar to the off-NMOS one. This could affect SEU rate calculations.
Keywords
Determination , bioreactor , Cell immobilization , Continuous , Biodegradable dissolved organic carbon
Journal title
IEEE Transactions on Nuclear Science
Serial Year
2003
Journal title
IEEE Transactions on Nuclear Science
Record number
86332
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