Deep level defects in n- and p-type Fe implanted InP

Deep level transient spectroscopy (DLTS) measurements had been performed on n- and p-type Fe implanted InP crystals. A majority carrier trap of activation energy Ea = 118 ± 20 mev was detected in Zn doped p-type samples. A minority carrier trap of activation energy Ea = 78 ± 20 mev was detected in the same samples. As for n-type samples doped with Sn, a single majority carrier trap having an activation energy Ea = 49 ± 20 mev was found. The calculated capture cross section at infinite temperature (σ∞) fr all the detected traps was very small (in the order of 10−20 cm2), characterizing those traps as Coulombic repulsive. The capacitance transient for all samples was non-exponential, giving rise to broad peaks. This could be explained on the basis of having several defect levels closely spaced rather than a discrete one. The trap concentration Nt was calculated and found to be in the order of 1016 cm−3, showing a higher concentration in p-type samples than those of n-type.