Theoretical study of GaInNAs-GaAs-based semiconductor optical amplifiers

We have calculated the basic properties of multiple-quantum-well semiconductor optical amplifiers (SOAs) with active regions based on the newly proposed material GaInNAs. The band structure is modeled using k.p theory and accounting for strain effects and the material gain in the context of free-carrier theory. The performance of structures with different nitrogen composition that emit at the same wavelength is modeled using a multisection approach accounting for spontaneous emission. The trends in the SOA performance related parameters are identified and explained.