Dielectric properties of ferroelectric thin films with surface transition layers

By taking into account surface transition layers (STL), the dielectric properties of ferroelectric thin films described by the transverse Ising model are discussed in the framework of the mean-field approximation. Functions of the intra-layer and inter-layer couplings are introduced to characterize STL, which makes the model more realistic compared to the previous treatment of surface layers using uniform surface exchange interactions and a transverse field. The effects of physical parameters on the dielectric properties are quantified. The results obtained indicate that STL has a very strong influence on the dielectric properties of ferroelectric thin films. Some of our theoretical results are in accordance with the available experimental data.