• Title of article

    Measurement of silicon and GaAs/Ge solar cells ac parameters

  • Author/Authors

    M.P. Deshmukh، نويسنده , , and J. Nagaraju، نويسنده ,

  • Issue Information
    ماهنامه با شماره پیاپی سال 2005
  • Pages
    4
  • From page
    1
  • To page
    4
  • Abstract
    The ac parameters (cell capacitance and cell resistance) of Silicon (Si) and Gallium Arsenide (GaAs/Ge) solar cells are measured at different temperatures using time domain technique. The cell capacitance is calculated from the Open circuit voltage decay (OCVD) and the cell resistance from solar cell I–V characteristics measured under dark condition. It is observed that the solar cell capacitance increases whereas the cell resistance decreases with increase in temperature. 2004 Elsevier Ltd. All rights reserved.
  • Keywords
    Si and GaAs/Ge solar cells , temperature , Ac parameters
  • Journal title
    Solar Energy
  • Serial Year
    2005
  • Journal title
    Solar Energy
  • Record number

    939421

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=939421