Title of article
The study of preparation and photoelectrical properties of chemical bath deposited Zn, Sb and Ni-doped CuInS2 films for hydrogen production
Author/Authors
Edita Garskaite a، نويسنده , , Guan-Ting Pan b، نويسنده , , Thomas C.-K. Yang a، نويسنده , , b، نويسنده , , ?، نويسنده , , Sheng-Tung Huang، نويسنده , , Aivaras Kareiva، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2012
Pages
8
From page
2584
To page
2591
Abstract
Pure and Zn, Sb, Ni-doped CuInS2 films were prepared by chemical bath deposition method. Structural, morphological, optical, and
photoelectrochemical properties of the as-grown films were investigated. X-ray diffraction analysis revealed that films consisted of the
tetragonal CuInS2 phase. The energy band gaps and carrier densities of these samples were in the ranges of 1.48–1.54 eV and
2.38 1018–9.38 1019, respectively. The maximum photocurrent density of samples with a potential of 1.0 V vs. a Pt electrode
was found to be 8.58 mA/cm2 with the largest hydrogen production capability of 33.26 lmol/cm2 under illumination using a 300 W
Xe lamp system.
2012 Elsevier Ltd. All rights reserved
Keywords
Photocatalysts , Electrochemical performance , Optical properties , CuInS2 crystalline
Journal title
Solar Energy
Serial Year
2012
Journal title
Solar Energy
Record number
941092
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