Title of article
Low-resistance ultrashallow extension formed by optimized flash lamp annealing
Author/Authors
T.، Ito, نويسنده , , H.، Murayama, نويسنده , , M.، Yoshioka نويسنده , , T.، Taniguchi, نويسنده , , M.، Tamura, نويسنده , , K.، Suguro, نويسنده , , Y.، Ushiku, نويسنده , , T.، Iinuma, نويسنده , , T.، Itani, نويسنده , , T.، Owada, نويسنده , , Y.، Imaoka, نويسنده , , T.، Kusuda, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-416
From page
417
To page
0
Abstract
Flash lamp annealing (FLA) technology is proposed as a new method of activating implanted impurities. By optimizing FLA and implantation conditions, junction depth (Xj) at the concentration of 1 * 10/sup 18/ cm/sup -3/ and the sheet resistance of 13 nm and 700 (omega)/s. for As and 14 nm and 770 (omega)/sq for BF/sub 2/ with junction leakage lower than 1 * 10/sup -16/ A/(mu)m/sup 2/ at 1.5 V were successfully obtained without wafer slip and warpage problems.
Keywords
Gene regulation , male reproductive tract , spermatid , testis , spermatogenesis
Journal title
IEEE Transactions on Semiconductor Manufacturing
Serial Year
2003
Journal title
IEEE Transactions on Semiconductor Manufacturing
Record number
95515
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