Short-channel single-gate SOI MOSFET model

The authors derive an analytical model for threshold voltage for fully depleted single-gate siliconon-insulator (SOI) MOSFETs taking into consideration the two-dimensional effects in both SOI and buried-oxide layers. Their model is valid for both long- and short-channel SOI MOSFETs and demonstrates the dependence of short-channel effects on the device parameters of channeldoping concentration, gate oxide, SOI, and buried-oxide thickness. It reproduces the numerical data for sub-0.1-(mu)m gate-length devices better than previous models.