Accurate electrical characterization of forward AC behavior of real semiconductor diode: giant negative capacitance and nonlinear interfacial layer

We have developed a new method to analyze the forward ac behavior of a semiconductor diode that uses a series mode. This method can accurately measure the dependence of series resistance, junction capacitance, junction voltage, ideality factor, and interfacial layer on forward bias voltages. Giant negative capacitance (NC) of the junction and the interfacial layer with nonlinear resistance and capacitance are confirmed in GaN Schottky diodes.