Temperature Dependence of Breakdown and Avalanche Multiplication in In0.53 Ga0.47 As Diodes and Heterojunction Bipolar Transistors

The avalanche multiplication and impact ionization coefficients in In0.53 Ga0.47 As p-i-n and n-i-p diodes over a range of temperature from 20-400 K were measured and shown to have negative temperature dependence. This is contrary to the positive temperature dependence of the breakdown voltage measured on In0.53 Ga0.47As heterojunction bipolar transistors (HBTs) in this and previous works. It is shown that the collector-base dark current and current gain can be the overriding influence on the temperature dependence of breakdown in In0.53 Ga0.47 As HBTs and could explain previous anomalous interpretations from the latter.