Title of article
SiC thin-film Fabry-Perot interferometer for fiber-optic temperature sensor
Author/Authors
Cheng، Lin نويسنده , , A.J.، Steckl, نويسنده , , J.، Scofield, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-2158
From page
2159
To page
0
Abstract
Polycrystalline SiC grown on single-crystal sapphire substrates have been investigated as thin-film FabryPerot interferometers for fiber-optic temperature measurements in harsh temperatures. SiC-based temperature sensors are compact in size, robust, and stable at high temperatures, making them one of the best choices for high temperature applications. SiC films with thickness of about 0.5-2.0 (mu)m were grown at 1100(degree)C by chemical vapor deposition (CVD) with trimethylsilane. The effect of operating temperature on the shifts in resonance minima, (delta)(lambda)/sub m/, of the SiC/sapphire substrate has been measured in the visible-infrared wavelength range. A temperature sensitivity of 1.9*10/sup – 5//(degree)C is calculated using the minimum at ~700 nm. Using a white, broadband light source, a temperature accuracy of +3.5(degree)C is obtained over the temperature range of 22(degree)C to 540(degree)C.
Keywords
channel hot electron (CHE) , channel initiated secondary electron (CHISEL) , Flash electrically erasable programmable read-only memories (EEPROMs) , Monte Carlo simulation , programming efficiency , hot carriers , device scaling
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Serial Year
2003
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Record number
95915
Link To Document