• Title of article

    Charge-based chemical sensors: a neuromorphic approach with chemoreceptive neuron MOS (C(nu)MOS) transistors

  • Author/Authors

    B.A.، Minch, نويسنده , , E.C.-C.، Kan, نويسنده , , N.Y.-M.، Shen, نويسنده , , Liu، Zengtao نويسنده , , Lee، Chungho نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    -2170
  • From page
    2171
  • To page
    0
  • Abstract
    A novel chemoreceptive neuron MOS (C(nu)MOS) transistor with an extended floating-gate structure has been designed with several individual features that significantly facilitate system integration of chemical sensing. We have fabricated C(nu)MOS transistors with generic molecular receptive areas and have characterized them with various fluids. We use an insulating polymer layer to provide physical and electrical isolation for sample fluid delivery. Experimental results from these devices have demonstrated both high sensitivity via current differentiation and large dynamic range from threshold voltage shifts in sensing both polar and electrolytic liquids. We have established electrochemical models for both steady-state and transient analyses. Our preliminary measurement results have confirmed the basic design and operations of these devices, which show potential for developing silicon olfactory and gustatory units that are fully compatible with current CMOS technology.
  • Keywords
    channel hot electron (CHE) , channel initiated secondary electron (CHISEL) , device scaling , Flash electrically erasable programmable read-only memories (EEPROMs) , Monte Carlo simulation , hot carriers , programming efficiency
  • Journal title
    IEEE TRANSACTIONS ON ELECTRON DEVICES
  • Serial Year
    2003
  • Journal title
    IEEE TRANSACTIONS ON ELECTRON DEVICES
  • Record number

    95917