Design guideline for minimum channel length in silicon-on-insulator (SOI) MOSFET

This brief proposes a preliminary design guideline for the minimum channel length in silicon-on-insulator (SOI) MOSFETs that is based on simulations of device characteristics. The simulations examine a wide variation in many device parameters to comprehensively evaluate device characteristics. A characteristic parameter that can successfully describe the minimum channel length is found. It is suggested that a sub-20nm-channel single-gate SOI MOSFET with suppressed short-channel effects can be stably realized by optimizing its device parameters.