Simulation of static and dynamic properties of edge-emitting multiple-quantum-well lasers

This paper demonstrates simulation tools for edge-emitting multiple-quantum-well (MQW) lasers. Properties of the strained MQW active region are simulated by eight-band kp calculations. Then, a two-dimensional simulation along the transverse cross section of the device is performed based on a drift-diffusion model, which is self-consistently coupled to equations for the optical field. Furthermore, a method is described that allows for an efficient quasi-three-dimensional simulation of dynamic properties of multisection edge-emitting lasers.