Investigation of a GaN surface structure for the mask of GaAs selective growth using MOMBE

The surface crystal structures of atomically thin GaN films formed under various conditions (substrate temperatures and source-gas pressures) were studied using reflection high-energy electron diffraction (RHEED) in order to determine the optimum crystal structure for GaAs selective growth using metalorganic molecular beam epitaxy (MOMBE). The suppression of GaAs deposition on the GaN surface strongly depended on the crystal structures of GaN. That is, not all of the GaN surface formed acted as a good mask; only a single-crystalline GaN surface showing a streaky RHEED pattern had a large suppression effect for GaAs deposition.