Title of article
AlAs layers with low carbon content grown by ALE using ethyldimethylamine alane as a new aluminum source
Author/Authors
N. Kano، نويسنده , , S. Hirose، نويسنده , , K. Hara، نويسنده , , J. Yoshino1، نويسنده , , H. Munekata، نويسنده , , H. Kukimoto، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1994
Pages
4
From page
132
To page
135
Abstract
We have successfully achieved atomic layer epitaxy (ALE) of AlAs with low carbon contents (1017-1018 cm-3) by using ethyldimethylamine alane as a novel aluminum source. This new source provides several interesting ALE behaviors characterized by a very wide ALE temperature window (250–650°C) and the presence of self-limiting growth modes of two- and three-monolayers as well as one-monolayer.
Journal title
Applied Surface Science
Serial Year
1994
Journal title
Applied Surface Science
Record number
989791
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