Oxidation of TiN thin films in an ion-beam-assisted deposition process

Surface vacancies stimulated by ions play a major role in the oxidation of TiN thin films deposited by a sequential ion-beam-assisted process. A possibility of substitution of N atoms just below the Ti vacant sites at the growing surface is suggested. A method for reducing the oxygen contamination by adjusting both the beam voltage and the current in the ion-assisting techniques is also presented.