Si1−xGex thin films deposited by the pulsed excimer laser ablation technique

In this paper, we investigate the possibility to use the pulsed excimer laser ablation technique for depositing Si1−xGex thin films both onto single-crystal silicon and fused quartz substrates. It is demonstrated that the film composition, surface morphology and structural properties of the deposits depend strongly on several parameters like the laser fluence and the nature as well as the temperature of the substrate during the deposition process.