Title of article
MBE-STM study of the Ga-rich 4 × 2 phase of the GaAs(001) surface
Author/Authors
Qikun Xue، نويسنده , , T. Sakurai and T. Hashizume ، نويسنده , , J.M. Zhou، نويسنده , , T. Sakata، نويسنده , , T. Sakurai، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1995
Pages
4
From page
364
To page
367
Abstract
We studied the atomic structure of the GaAs(001) 4 × 2 and 4 × 6 phases by scanning tunneling microscopy (STM) and determined that both the 4 × 2c(8 × 2) and 4 × 6 phases are Ga-terminated. The 4 × 2c(8 × 2) structure can be described better by Biegelsen et al.ʹs bilayer Ga dimer model than by Skalaʹs As model.
Journal title
Applied Surface Science
Serial Year
1995
Journal title
Applied Surface Science
Record number
990119
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