Title of article
Structure of the MBE-grown GaAs(001)-(2 × 4) phase
Author/Authors
Tomihiro Hashizume، نويسنده , , Q.K. Xue، نويسنده , , A. Ichimiya، نويسنده , , T. Sakurai، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1995
Pages
7
From page
373
To page
379
Abstract
The systematic study of the FI-STM images and reflection high-energy electron diffraction of the GaAs(001)2 × 4 surface showed that the GaAs(001)-(2 × 4)-α, β and γ phases all have the same unit cell in the topmost layer consisting of two As dimers and two dimer vacancies.
Journal title
Applied Surface Science
Serial Year
1995
Journal title
Applied Surface Science
Record number
990121
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