Electrical characteristics of aluminum contacts to porous silicon

Electrical properties of aluminum contacts to porous silicon (PS), when a PS layer was formed in different technological conditions on different silicon wafers, have been studied in this work. The possibility was shown of creating ohmic contacts to PS with a transition-specific resistivity equal to 8 × 10−3−1.2 × 10−2 Ω · cm2 by usage of n-type silicon substrates with conditions of low porosity and low resistivity of porous material. The role of an amorphous layer on a PS surface by formation of low-resistive ohmic contact was studied. The rectifying properties of aluminum contacts to high-resistive porous silicon of p- and n-type were described. The appearance of blocking transitions results from the full or partial depletion of dopant in mono-crystal PS matrix. It was demonstrated, that in a number of cases the ohmic contact to the high-resistive porous silicon on the n-type substrates may be created.