Title of article
Deposition of titanium nitride/tungsten layers for application in vertically integrated circuits technology
Author/Authors
G. Ruhl، نويسنده , , B. Fr?schle، نويسنده , , P. Ramm، نويسنده , , A. Intemann، نويسنده , , W. Pamler، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1995
Pages
6
From page
382
To page
387
Abstract
Chemical vapor deposition (CVD) processes were developed meeting the stringent requirements for the metallization of inter-chip-vias (ICV) in the vertical integration of chips technology. The metallization is done by highly conformal deposition of a titanium nitride glue layer in vias with extremely high aspect ratios as 7 : 1 and void-free filling of the vias with tungsten.
Journal title
Applied Surface Science
Serial Year
1995
Journal title
Applied Surface Science
Record number
990305
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