Growth of ZnSe thin films by radical assisted MOCVD method

ZnSe epitaxial films were grown by the low pressure metal organic chemical vapor deposition (MOCVD) technique using diethylzinc and selenium hydride as the source materials. When H radicals generated by a rf glow discharge are introduced into the reaction site, the growth rate of the ZnSe film was increased by a factor of 10. The reactivity between source materials and H radicals was investigated for different pressures, substrate temperatures as well as for different concentrations of H radicals and source materials. With the assistance of H radicals, epitaxial growth of ZnSe films on Si substrates was realized at substrate temperatures above 400°C. If the plasma is produced by N2 gas, ZnSe films could be obtained similar to that of the H2 plasma environment. This method is seen to be a promising technique in doping nitrogen into ZnSe in producing p-ZnSe films.