Schottky barrier formation for passivated semiconductor surfaces

The effect on the Schottky barrier height of H-monolayer passivation of the Si(111) surface is explored. In our calculations we have analyzed KSi(111) interfaces (θ = 13 ML) with and without a H interlayer. Our results show that the effect of passivation is to reduce the Schottky barrier height, φbn, by 0.23 eV. Comparison is made with previous results on passivated GaAs(110) surfaces.