Title of article
Micro-Raman study of UV laser ablation of GaAs and Si substrates
Author/Authors
C. Garc?a، نويسنده , , J. Ramos، نويسنده , , A.C. Prieto، نويسنده , , J. Jiménez، نويسنده , , C. Geertsen، نويسنده , , J.L. Lacour، نويسنده , , P. Mauchien، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
6
From page
370
To page
375
Abstract
Laser ablation of semiconductors presents an increasing interest for different purposes, such as surface modification. Morphologic and structural changes induced by UV-pulsed laser beams on GaAs and Si are studied by means of surface topography (optical interferometry) and micro-Raman spectroscopy. Crystal order and chemical composition (stoichiometry and dopant distribution) are shown to be changed by the ablation with energy above the melting threshold. Results are compared for GaAs and Si substrates.
Journal title
Applied Surface Science
Serial Year
1996
Journal title
Applied Surface Science
Record number
990600
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