• Title of article

    White synchrotron X-radiation-section topography of high energy density ns-pulsed (Nd:YAG) ablation damage in Si(100) wafers

  • Author/Authors

    J.D. Stephenson، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1996
  • Pages
    4
  • From page
    528
  • To page
    531
  • Abstract
    The penetration depth of ns-laser pulse damage in silicon single crystal semiconductor wafers is observed from (Laue transmission) white synchrotron X-radiation section topographs. Strain fields (with displacements ∼ 1000 times smaller than the dislocation region) are sensitively detected.
  • Journal title
    Applied Surface Science
  • Serial Year
    1996
  • Journal title
    Applied Surface Science
  • Record number

    990629

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=990629