Title of article
Laser reactive ablation deposition of silicon carbide films
Author/Authors
G. Leggieri، نويسنده , , A. Luches، نويسنده , , M. Martino، نويسنده , , A. Perrone، نويسنده , , R. Alexandrescu، نويسنده , , A. Barborica، نويسنده , , E. Gyorgy، نويسنده , , Shyh-Lin Tsao and I.N. Mihailescu، نويسنده , , G. Majni، نويسنده , , P. Mengucci، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
4
From page
866
To page
869
Abstract
Silicon carbide films were deposited on Si wafers (at room temperature and 150°C) by XeCl laser (fluence 5 J/cm2, pulse duration 30 ns, repetition rate 10 Hz) ablation of Si in low pressure (0.25–6 mbar) CH4 atmosphere. The deposits were characterized by different diagnostic techniques (XRD, XPS, RBS, etc.). Polycrystalline stoichiometric silicon carbide films ∼ 1 μm thick were obtained under specific conditions after ∼ 104 laser pulses.
Journal title
Applied Surface Science
Serial Year
1996
Journal title
Applied Surface Science
Record number
990691
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