AES of semi-insulating polycrystalline silicon layers

The paper deals with evaluation of Auger electron spectra of semi-insulating silicon (SIPOS) layers. We have found that Auger spectra of SIPOS layers can be simulated by a synthesis of SiLVV Auger spectra of Si and SiO2 reference samples and of a spectrum of electron energy losses due to transmission of dominant Auger electrons belonging to pure silicon through the phase of SiO2.