Title of article
Approach to in situ characterization of polysilicon surfaces annealed by XeCl excimer laser
Author/Authors
Tohru Nishibe، نويسنده , , Hiroshi Mitsuhashi، نويسنده , , Yuki Matsuura، نويسنده , , Yoshito Kawakyu، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
6
From page
35
To page
40
Abstract
An approach to in situ characterization of polysilicon surfaces annealed by a XeCl excimer laser has been investigated by the UV reflectance method and atomic force microscopy which represents a nano-scale surface morphology. The features of the surface morphology were found to be closely connected to the performance of TFT devices.
Journal title
Applied Surface Science
Serial Year
1996
Journal title
Applied Surface Science
Record number
990701
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