On the application of XPS to ceria films grown by MOCVD using a fluorinated precursor

MOCVD grown CeO2 films using the precursor Ce(fod)4 (where fod-H = 1,1,1,2,2,3,3-heptafluoro-7,7-dimethyloctane-3,5-dione) have been analysed by XPS. Residual fluorine was found to be in the form of fluoride and an organo-related fluorine species which converted rapidly to fluoride under application of the XPS technique. At the same time the CeO2 spectrum developed the presence of Ce3+. The rate of conversion was found to be sample dependent.