• Title of article

    Structural properties of epitaxially grown perfluoron-alkanethin films prepared by vapor deposition

  • Author/Authors

    Kenji Ishida، نويسنده , , Toshihisa Horiuchi، نويسنده , , Shouichi Kai، نويسنده , , Kazumi Matsushige، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1996
  • Pages
    4
  • From page
    116
  • To page
    119
  • Abstract
    Structural and orientational studies of epitaxially grown perfluoron-alkane(CF3(CF2)18CF3) thin films evaporated on KCl(001) substrates were conducted by an energy dispersive total reflection X-ray diffractometer. Then-C20F42molecules grow epitaxially on the KCl(001) surface owing to the slight interaction between the terminal CF3 groups and KCl(001), arranging their 〈100〉hex directions along the KCl 〈110〉 directions. The detailed analysis suggests that most of the molecules crystallize on the epitaxially grown underlayers with the same orientational distribution, although the population of the crystallite with randomly oriented domain structure is slightly increased with increasing thickness. Furthermore, the distorted epitaxial growth with an inclination about ±5° from the KCl 〈110〉 directions was observed and its origin was discussed with respect to the lattice relationship.
  • Journal title
    Applied Surface Science
  • Serial Year
    1996
  • Journal title
    Applied Surface Science
  • Record number

    990769