Title of article
Decomposition of triethylindium (TEI) on GaP(001) surface studied by TPD, XPS and RHEED
Author/Authors
J. Murata، نويسنده , , T. Takeuchi، نويسنده , , Y. Suzuki، نويسنده , , N. Sanada، نويسنده , , Y. Fukuda، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
4
From page
417
To page
420
Abstract
Decomposition of triethylindium (TEI) on a GaP(001) surface with and without hydrogen gas ambience has been studied using temperature programmed desorption (TPD), X-ray photoelectron spectroscopy (XPS) and reflection high-energy electron diffraction (RHEED). We find TPD peaks of ethylene at about 110 and 330°C and those of hydrogen at 110, 220 and 330°C. Desorption products are not changed with and without hydrogen gas ambience. The intensity ratio of the ethylene peak at about 330 to that at 110°C increases with hydrogen gas ambience. The mechanism of decomposition of TEI on the GaP(001) surface is discussed.
Journal title
Applied Surface Science
Serial Year
1996
Journal title
Applied Surface Science
Record number
990830
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