Title of article
Initial oxidation of Si(311) surfaces studied by high-resolution electron energy loss spectroscopy
Author/Authors
Hiroya Ikeda، نويسنده , , Tohru Yamada، نويسنده , , Koji Hotta، نويسنده , , Shigeaki Zaima، نويسنده , , Yukio Yasuda، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
5
From page
431
To page
435
Abstract
Surface reactions of Si(311) surfaces with hydrogen, oxygen, and water have been investigated by high-resolution electron energy loss spectroscopy (HREELS). The structure ofSi(311)-3 × 1clean surfaces is transformed to a1 × 1structure by exposure to atomic hydrogen and H-terminated Si(311) surfaces are stable against the O2 adsorption at room temperature. On the other hand, the H2O-adsorbed surface have a3 × 1structure, and H2O molecules are considered to adsorb dissociatively only on the dangling bonds of dimer atoms but not on those of step-site atoms. The experimental data suggests that the step-site atoms on the(311)-3 × 1surface are stabilized against the H2O and O2 adsorption.
Journal title
Applied Surface Science
Serial Year
1996
Journal title
Applied Surface Science
Record number
990833
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