Title of article
Co overlayer formation process onSi(100)2 × 1 studied by SR-PES
Author/Authors
T. Jikimoto، نويسنده , , Michael C. Heck، نويسنده , , K. Komoku، نويسنده , , M. Hirai، نويسنده , , M. Kusaka، نويسنده , , M. Iwami and M. Yanagihara، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
5
From page
513
To page
517
Abstract
The initial stage of Co(film)-Si(substrate) contact formation was studied at room temperature by photoemission spectroscopy (PES) using synchrotron radiation (SR) and low energy electron diffraction (LEED). The results allow us to conclude that the deposited Co atoms interact chemically with Si atoms from the beginning of Co deposition on the Si substrate and the same Co-Si reacted product forms onSi(100)2 × 1 surface atθ(Co) ≤ 3.
Journal title
Applied Surface Science
Serial Year
1996
Journal title
Applied Surface Science
Record number
990848
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