Low pressure MOCVD of TiN thin films

From multiple regression analysis in the bottom coverage and resistivity of TiN films deposited using tetrakis(diethylamino)titanium (TDEAT), contour maps were calculated as functions of wafer temperature and reactor pressure. High bottom coverage and low resistivity were predicted at low pressure and low temperature with NH3 additives. Films have been deposited below 400°C and total reactor pressures below 133.3 Pa. Especially by adding a little NH3 to TDEAT, bottom coverages of 100% have been accomplished in 4.0 aspect ratio contacts with 300 nm diameter. Film resistivities have been also decreased from 24, 000 μΩ cm to about 10, 000 μΩ cm with 15 sccm NH3.