Title of article
Segregation of n-dopants on SiGe surfaces
Author/Authors
J.F. Nützel، نويسنده , , M. Holzmann، نويسنده , , P. Schittenhelm، نويسنده , , G. Abstreiter، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
4
From page
98
To page
101
Abstract
We have investigated the surface segregation of phosphorus in comparison to antimony on Si and SiGe(001) in molecular beam epitaxy. The segregation was measured with electrochemical capacitance voltage and secondary ion mass spectroscopy. Phosphorus doping is used to achieve high carrier concentrations in complementary double-sided modulation-doped n-Si and p-Ge channel (CMOD) structures on SiGe graded buffers.
Journal title
Applied Surface Science
Serial Year
1996
Journal title
Applied Surface Science
Record number
990898
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