Title of article
Optical and electrical characterization of high quality β-FeSi2 thin films grown by solid phase epitaxy
Author/Authors
D.H. Tassis، نويسنده , , C.L. Mitsas، نويسنده , , T.T. Zorba، نويسنده , , M. Angelakeris، نويسنده , , C.A. Dimitriadis، نويسنده , , O. Valassiades، نويسنده , , D.I. Siapkas، نويسنده , , G. Kiriakidis، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
6
From page
178
To page
183
Abstract
High quality β-FeSi2 thin films were grown on Si〈100〉 substrates by UHV electron beam evaporation of α-Si/Fe multilayers and annealed by conventional vacuum furnace and rapid thermal techniques. Infrared spectroscopy (reflectance and transmittance) and electrical measurements were employed to characterize the films. Hall measurements performed on the thin films yielded exceptionally high free carrier mobilities, up to 112 cm2/Vs.
Journal title
Applied Surface Science
Serial Year
1996
Journal title
Applied Surface Science
Record number
990915
Link To Document