Reaction mechanisms of mono-molecular layer growth using chemical adsorption

The surface reaction mechanism of GaAs monolayer after monolayer growth using chemical adsorption of Ga(CH3)3 (trimethylgallium (TMG)) and arsine (AsH3) was investigated. The monolayer growth on GaAs(100) was investigated as a function of injection duration, injection pressure, evacuation duration of TMG and AsH3 and photo-irradiation in an ultra-high vacuum system. It was found that the growth rate per cycle was strongly influenced by the surface stoichiometry of arsenic during the growth. Furthermore, in-situ analysis of the monolayer growth by using mass spectroscopy and the measurement of surface reflectivity during monolayer growth was performed. As the result, a model for the surface reaction and the adsorbed species of mono-molecular layer growth was obtained.