• Title of article

    Deposition of CN films by reactive laser ablation

  • Author/Authors

    E. DʹAnna، نويسنده , , A. Luches، نويسنده , , A. Perrone، نويسنده , , S. Acquaviva، نويسنده , , R. Alexandrescu، نويسنده , , Shyh-Lin Tsao and I.N. Mihailescu، نويسنده , , J. Zemek، نويسنده , , G. Majni، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1996
  • Pages
    6
  • From page
    126
  • To page
    131
  • Abstract
    A study of the characteristics of films deposited at room temperature on Si and KBr substrates by XeCl laser ablation of graphite in low pressure (0.25–2.5 mbar) N2 and NH3 is presented. Hard films, with a very high electrical resistivity were obtained. NC atomic ratios up to 0.6 were calculated from backscattering measurements. Different diagnostic techniques (XPS, IR absorption spectroscopy, etc.) prove the formation of carbon nitride with a prevalent graphitic structure.
  • Journal title
    Applied Surface Science
  • Serial Year
    1996
  • Journal title
    Applied Surface Science
  • Record number

    991153