Title of article
Deposition of CN films by reactive laser ablation
Author/Authors
E. DʹAnna، نويسنده , , A. Luches، نويسنده , , A. Perrone، نويسنده , , S. Acquaviva، نويسنده , , R. Alexandrescu، نويسنده , , Shyh-Lin Tsao and I.N. Mihailescu، نويسنده , , J. Zemek، نويسنده , , G. Majni، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
6
From page
126
To page
131
Abstract
A study of the characteristics of films deposited at room temperature on Si and KBr substrates by XeCl laser ablation of graphite in low pressure (0.25–2.5 mbar) N2 and NH3 is presented. Hard films, with a very high electrical resistivity were obtained. NC atomic ratios up to 0.6 were calculated from backscattering measurements. Different diagnostic techniques (XPS, IR absorption spectroscopy, etc.) prove the formation of carbon nitride with a prevalent graphitic structure.
Journal title
Applied Surface Science
Serial Year
1996
Journal title
Applied Surface Science
Record number
991153
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