Title of article
248 nm photosensitivity of reduced SiO2–GeO2 layer on silica substrate: preliminary results on the light–matter interaction
Author/Authors
B Poumellec، نويسنده , , F Kherbouche، نويسنده , , C Haut، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
6
From page
283
To page
288
Abstract
248 nm photosensitivity is studied in thin layers of H2 reduced SiO2–GeO2 binary glasses deposited onto silica substrates by a flame hydrolysis method. It has been found that several effects take place depending on the time of UV exposure and on the fluence per pulse used. We have called them, `behaviour I, II and IIIʹ. The first one corresponds to an increase of volume under irradiation, induced probably by a reoxidation of Ge previously reduced by the pre-irradiation chemical treatment. The second one is a common fusion–ablation process. The third one is still not clear but would imply, a diffusive process from nonirradiated to irradiated regions. These observations contrast with the ones made in nonreduced SiO2–GeO2 glass for which densification has been pointed out.
Journal title
Applied Surface Science
Serial Year
1997
Journal title
Applied Surface Science
Record number
991371
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