Growth of ZnSe thin films by metalorganic chemical vapor deposition using nitrogen trifluoride

The radical-assisted metalorganic chemical vapor deposition (MOCVD) of ZnSe films on GaAs (100) was performed at 723 K under atmospheric pressure by using rf-heated horizontal reactor. Diethylzinc (DEZn) and diethylselenide (DESe) as source materials were carried by H2 gas, where the [VI][II] ratio was kept at 1. Nitrogen trifluoride (NF3) was used as co-reactant. With an increase of NF3 flux, the growth rate was drastically enhanced, which might be due to dealkylation by chain reactions between DESe and NF3. Photoluminescence of the ZnSe films measured for the films grown with small NF3 flux indicated the donor-acceptor (D-A) pair emission. The Hall coefficient measured using Au Ohmic contacts indicated the hole concentration in the order of magnitude of 1022 m−3. The results suggest that the nitrogen atoms from NF3 might be incorporated into the grown films as acceptors.