Title of article
Porous silicon annealed under mixed hydrogen and argon atmosphere
Author/Authors
Takato Nakamura، نويسنده , , Hideki Omoya، نويسنده , , Kazuya Sasaki، نويسنده , , Naoto Azuma، نويسنده , , Hidenori Mimura، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
4
From page
145
To page
148
Abstract
Light emitting properties of porous silicon annealed under mixed H2 and Ar gas flowing at various temperatures has been examined. Photoluminescence of the porous silicon annealed at 950°C gives a peak at 470 nm with the full-width-at-half-maximum of 50 nm.
Journal title
Applied Surface Science
Serial Year
1997
Journal title
Applied Surface Science
Record number
991561
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