Experimental determination of positronic and electronic characteristics of 3C-SiC

The positron diffusion length L+ and electron and positron work functions (φ− and φ+) of the same sample of 3-SiC epitaxially grown on a Si(001) substrate have been experimentally determined, together with re-emitted slow positron yields. The results allow conclusions on the quality and thickness of the 3C-SiC epitaxial layer as well as an assessment of the accuracy of earlier first-principles calculations of positron-related materials properties.