Title of article
Positron studies of plasma-treated silicon wafers
Author/Authors
D.P. Van، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
3
From page
228
To page
230
Abstract
Wafers of silicon treated with rf oxygen and hydrogen plasma have been studied with the Herodotus slow positron beam. Doppler broadening measurements reveal the influence of temperature and time on defect profiles beneath the surfaces.
Journal title
Applied Surface Science
Serial Year
1997
Journal title
Applied Surface Science
Record number
991730
Link To Document