Raman spectroscopic study on hydrogen molecules in crystalline silicon treated with atomic hydrogen

We have investigated the Raman spectra of hydrogen molecules in heavily doped n-type crystalline silicon exposed to hydrogen atoms at various substrate temperatures. A significant hydrogenation-temperature dependence has been observed in the intensity and the shape of the vibrational Raman line of hydrogen molecules. The vibrational line of hydrogen molecules is as broad when measured at 90 K as at 300 K. The results indicate that hydrogen molecules are formed effectively at higher temperature than the temperature appropriate for the platelet formation, and trapped in various interstitial sites in crystalline silicon.