Reactive deposition epitaxial growth of P-FeSi, layers on Si(OO1)

/3-FeSi, layers were grown on (001) Si substrates by reactive deposition epitaxy (RDE) in which the iron was deposited on hot substrates. High quality PFeSi, crystalline layers satisfying the relation of /3-FeSi,(lOO)//Si(OOl) was formed at the substrate temperature of 470°C. On the other hand, three-dimensional (3D) growth of (111) oriented cy-FeSi, (metallic) was formed at the substrate temperature of 850°C. The mixed layer of (Y and p phases was grown at the substrate temperature of 700°C. In the formation of thick P-FeSi, layers, the crystal quality was improved by alternate deposition of Fe and Si. Measurements of the absorption coefficient at room temperature indicate that /3-FeSi, has a direct band gap of about 0.83 eV.