Electrical properties of ferroelectric BaMgF, films grown on GaAs substrates using AlGaAs buffer layer

Ferroelectric BaMgF, films have been grown on GaAs substrates with and without an AlGaAs buffer layer for metal-ferroelectric-semiconductor field effect transistor (MFSFET) applications. It is shown that the temperature range of 530-570°C is suitable to grow the (140)-oriented BaMgF, films on GaAs. Furthermore, it is demonstrated that the AlGaAs buffer layer is effective to reduce the leakage current. Capacitance-voltage (C-V) characteristics of Al/BaMgF,/AlGaAs/n-GaAs/n+-GaAs(100) structures show a hysteresis loop with a counterclockwise trace, demonstrating the ferroelectric nature of the BaMgF, film. On the other hand, the BaMgF, film directly grown on GaAs substrates has clockwise-hysteresis loops due to the charge injections. It is also shown that the remanent polarization estimated from the polarization-electric field (P-E) characteristics is as large as 1.2 @/cm*.